WPM2019 single p-channel, -20v, -0.73a, power mosfet descriptions the WPM2019 is p-channel enhancement mos field effect transistor. uses advanced trench technology and desig n to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power switch and charging circuit. standard product WPM2019 is pb-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sot-523 applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging sot-523 pin configuration (top view) p9* p9 =device code * = month(a~z) marking order information device package shipping WPM2019-3/tr sot-523 3000/reel&tape v ds (v) rds(on) (
) 0.480@ v gs = " 4.5v 0.620@ v gs = " 2.5v -20 0.780@ v gs = " 1.8v d 3 1 3 12 gs 2 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds -20 gate-source voltage v gs 5 v t a =25c -0.73 -0.62 continuous drain current a t a =70c i d -0.58 -0.50 a t a =25c 0.38 0.28 maximum power dissipation a t a =70c p d 0.24 0.18 w t a =25c -0.61 -0.55 continuous drain current b t a =70c i d -0.49 -0.44 a t a =25c 0.27 0.22 maximum power dissipation b t a =70c p d 0.17 0.14 w pulsed drain current c i dm -1.2 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t ? 10 s 285 325 junction-to-ambient thermal resistance a steady state r ja 355 440 t ? 10 s 395 460 junction-to-ambient thermal resistance b steady state r ja 465 560 junction-to-case thermal resistance steady state r jc 280 320 c/w a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j =150c. WPM2019 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = -250ua -20 v zero gate voltage drain current i dss v ds =-16 v, v gs = 0v -1 ua gate-to-source leakage current i gss v ds = 0 v, v gs = 5v -5 ua on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = -250ua -0.40 -0.65 -0.90 v v gs = -4.5v, i d = -0.45a 480 810 v gs = -2.5v, i d = -0.35a 620 1050 drain-to-source on-resistance r ds(on) v gs = -1.8v, i d = -0.25a 780 1300 m ? forward transconductance g fs v ds = -5 v, i d =-0.45a 1.25 s charges, capacitances and gate resistance input capacitance c iss 74.5 output capacitance c oss 10.8 reverse transfer capacitance c rss v gs = 0 v, f = 100khz, v ds = -10 v 10.2 pf total gate charge q g(tot) 1.8 threshold gate charge q g(th) gate-to-source charge q gs 0.18 gate-to-drain charge q gd v gs = -4.5 v, v ds = -10 v, i d = -0.45a 0.74 nc switching characteristics turn-on delay time td(on) 45 rise time tr 140 turn-off delay time td(off) 1500 fall time tf v gs = -4.5 v, v ds = -10 v, r g =6 ? 2100 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = -0.15a -0.50 -0.65 -1.50 v i d =-0.45a, 0.12 WPM2019 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) 012345 0.0 0.5 1.0 1.5 2.0 v gs = -2.5 ~ -5v output characteristics on-resistance vs. drain current on-resistance vs. junction temperature on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage threshold voltage vs. temperature threshold voltage vs. temperature v gs = -2.0v v gs = -1.5v -i ds _drain to source current (a) -v ds _drain to source voltage (v) 0.0 0.3 0.6 .9 1.2 1.5 1.8 0 300 600 900 1200 1500 0 t=-50 0 c t=125 0 c v ds = -5v -i ds - drain current (a) -v gs - gate to drain voltage (v) t=25 0 c 0.20.40.60.81.0 200 400 600 800 1000 v gs =-2.5v v gs =-4.5v r ds(on) - on-resistance (m : ) i ds -drain to source current (a) 1.01.52.02.53.03.54.04.5 200 400 600 800 1000 1200 1400 i ds =-0.45a r ds(on) - on-resistance (m : ) -v gs -gate to source voltage(v) -50 0 50 100 150 300 400 500 600 700 v gs =-4.5v i ds =-0.45a r ds(on) - on-resistance (m : ) temperature ( 0 c) -25 0 25 50 75 100 125 150 0.3 0.4 0.5 0.6 i ds = -250ua -v gs(th) - threshold voltage (v) temperature ( 0 c) WPM2019 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance single pulse power 0.4 0.5 0.6 0.7 0.8 0.9 50 100 150 200 250 t=25 0 c body diode forward voltage safe operating power transient thermal response (junction-to-ambient) 0246810 0 30 60 90 120 v gs =0 f=100khz c-capacitance (pf) -v ds - drain to source voltage (v) cin cout crss t=125 0 c -i sd - source to drain current (a) -v sd - source to drain voltage(v) 0 2 4 6 8 10 12 14 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) power (w) t j(max) =150c t a =25c 0.01 0.10 1.00 10.00 0.1 1 10 100 -v ds (volts) -i d (amps) 100 s 1 0 m s 1ms 0.1s 1s 10s dc r ds(on) limited t j ( max ) =150c, t a =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =440c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d t on p d WPM2019 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions dimensions in millimeter symbol min. typ. max. a 0.700 0.800 0.900 a1 0.000 0.050 0.100 a2 0.700 0.750 0.800 b1 0.150 0.200 0.250 b2 0.250 0.300 0.350 c 0.100 0.150 0.200 d 1.500 1.600 1.700 e 0.700 0.800 0.900 e1 1.450 1.600 1.750 e 0.500typ e1 0.900 1.000 1.100 l 0.400ref l1 0.260 0.460 ? 0 e 8 e sot-523 WPM2019 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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